TQM7M5013 data sheet quad-band gsm850/gsm900/dcs/pcs advanced input power controlled edge pam functional block diagram data sheet for additional information and the latest specifications, see our website: www.triquint.com revision p, august 31, 2011 1 features ? for quad band gsm/edge ? digital control interface ? low current at backed-off power levels ? input power controlled ? gmsk and 8psk ? lb has 4 modes ? hp, mp, lp, and ulp ? hb has 3 modes ? hp, lp, and ulp ? hbt/phemt high efficient technology ? high?power linearity ? standard lb and hb paths ? 50? input and output impedance ? halogen-free ? 11 pin package applications ? gsm/edge/wedge handsets ? gsm/edge/wedge wireless cards package style c ontrol c ircuit rf_in_dcs vbatt hben vmode0 vmode1 lben gnd rf_in_gsm rf_out_dcs vcc rf_out_gsm product description the TQM7M5013 is an input power controlled, multiple gain state, quad band, gsm/edge pam designed for use with the qualcomm qtr/rtr8600 wedge solutions. this highly efficient pam significantly improves talk-time while still providing an easy to use solution in a sm all form factor. the pa output power is controlled by the input power coming from the transceiver in both gmsk and 8psk modes and so does not require a vramp input. additionally, the small 5mm x 5mm package requires minimum board space and allows for high levels of phone integration. electrical specifications 1 gsm850 gsm900 dcs pcs uni ts typ typ typ typ gmsk hpm pout 35.3 35 33.3 33 dbm gmsk mpm pout 31.8 32.2 - - dbm 8psk (rms power) 29 29 28 28 dbm gmsk lpm pout 22 22 22.8 22 dbm gmsk ulpm pout 20.5 21 21.5 20 dbm gmsk hpm pae 52 5 5 55 52 % gmsk mpm pae 43 45 - - % gmsk lpm pae 27 31 25 1 9 % gmsk ulpm pae 29 32 23 1 6 % parameter note 1: rf performance measured at standard operating conditions.
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